US PATENT SUBCLASS 438 / 370
.~.~.~ Forming buried region (e.g., implanting through insulating layer, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
364  DF  .~ Self-aligned {2}
369  DF  .~.~ Dopant implantation or diffusion {2}
370.~.~.~ Forming buried region (e.g., implanting through insulating layer, etc.)

DEFINITION

Classification: 438/370

Forming buried region (e.g., implanting through insulating layer, etc.):

(under subclass 369) Process wherein the dopant is implanted or diffused through an insulating layer.