US PATENT SUBCLASS 438 / 372
.~.~.~.~ Plural doping steps


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
364  DF  .~ Self-aligned {2}
369  DF  .~.~ Dopant implantation or diffusion {2}
371  DF  .~.~.~ Simultaneous introduction of plural dopants {1}
372.~.~.~.~ Plural doping steps {4}
373  DF  .~.~.~.~.~> Multiple ion implantation steps {1}
375  DF  .~.~.~.~.~> Forming partially overlapping regions
376  DF  .~.~.~.~.~> Single dopant forming regions of different depth or concentrations
377  DF  .~.~.~.~.~> Through same mask opening


DEFINITION

Classification: 438/372

Plural doping steps:

(under subclass 369) Process having multiple steps of doping semiconductive regions of the substrate.