US PATENT SUBCLASS 438 / 410
.~.~ Encroachment of separate locally oxidized regions


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
404  DF  .~ Total dielectric isolation {7}
410.~.~ Encroachment of separate locally oxidized regions


DEFINITION

Classification: 438/410

Encroachment of separate locally oxidized regions:

(under subclass 404) Process for making a total dielectric isolation semiconductor structure including a step of oxidation of adjacent semiconductive regions whereby the oxidized regions acquire a touching relationship.