US PATENT SUBCLASS 438 / 727
.~.~.~.~.~ Producing energized gas remotely located from substrate

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
707  DF  .~.~ Utilizing electromagnetic or wave energy {3}
710  DF  .~.~.~ By creating electric field (e.g., plasma, glow discharge, etc.) {17}
726  DF  .~.~.~.~ Having microwave gas energizing {1}
727.~.~.~.~.~ Producing energized gas remotely located from substrate {1}
728  DF  .~.~.~.~.~.~> Using magnet (e.g., electron cyclotron resonance, etc.)

DEFINITION

Classification: 438/727

Producing energized gas remotely located from substrate:

(under subclass 726) Processes wherein the etching gas is energized in a region spaced apart from the region in which the semiconductor substrate is located.