US PATENT SUBCLASS 438 / 736
.~.~.~ Utilizing multilayered mask

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
735  DF  .~.~ Differential etching of semiconductor substrate {2}
736.~.~.~ Utilizing multilayered mask

DEFINITION

Classification: 438/736

Utilizing multilayered mask:

(under subclass 735) Processes wherein selected regions of the semiconductor substrate are protected from the effects of the etching gas through use of a mask composed of plural layers.