US PATENT SUBCLASS 438 / FOR 110
.~.~ With in situ activation or combining of etching components on surface (156/635.1)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 110.~.~ With in situ activation or combining of etching components on surface (156/635.1)

DEFINITION

Classification: 438/FOR.110

With in situ activation or combining of etching components on surface:

Foreign art collection for processes directed to (a) applying a chemical substance which is inert to the substrate and thereafter treating the chemical substrate to produce a chemical reagent which functions to etch the substrate, or (b) simultaneously applying two or more substances none of which will alone etch the substrate but which interact with each other to produce a chemical reagent which etches the substrate.