US PATENT SUBCLASS 438 / FOR 249
.~.~ Growth through opening (437/89)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 249.~.~ Growth through opening (437/89) {2}
FOR 250  DF  .~.~.~> Forming recess in substrate and refilling (437/90) {1}
FOR 252  DF  .~.~.~> By liquid phase epitaxy (437/92)

DEFINITION

Classification: 438/FOR.249

Growth through opening:

Foreign art collection for processes wherein the crystal growth occurs in an open space in or on the device.