US PATENT SUBCLASS 438 / FOR 290
.~.~.~ By liquid phase epitaxy (437/130)


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 286  DF  .~.~ Heteroepitaxy (437/126) {7}
FOR 290.~.~.~ By liquid phase epitaxy (437/130)


DEFINITION

Classification: 438/FOR.290

By liquid phase epitaxy:

Foreign art collection for processes involving growth of a single crystal material from a liquid source.