| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
|
| FOR 149 | DF | INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7} |
| FOR 301 |  | .~ Diffusing a dopant (437/141) {17} |
| FOR 302 | DF | .~.~> To control carrier lifetime, i.e., deep level dopant Au (Gold), Cr (Chromium), Fe (Iron), Ni (Nickel), etc. (437/142) |
| FOR 303 | DF | .~.~> Al (Aluminum) dopant (437/143) |
| FOR 304 | DF | .~.~> Li (Lithium) dopant (437/144) |
| FOR 305 | DF | .~.~> Including nonuniform heating (437/145) |
| FOR 306 | DF | .~.~> To solid state solubility concentration (437/146) |
| FOR 307 | DF | .~.~> Using multiple layered mask (437/147) {1} |
| FOR 309 | DF | .~.~> Forming partially overlapping regions (437/149) |
| FOR 310 | DF | .~.~> Plural dopants in same region, e.g., through same mask opening, etc. (437/150) {1} |
| FOR 312 | DF | .~.~> Plural dopants simultaneously in plural region (437/152) |
| FOR 313 | DF | .~.~> Single dopant forming plural diverse regions (437/153) {1} |
| FOR 315 | DF | .~.~> Using metal mask (437/155) |
| FOR 316 | DF | .~.~> Outwardly (437/156) |
| FOR 317 | DF | .~.~> Laterally under mask (437/157) |
| FOR 318 | DF | .~.~> Edge diffusion by using edge portion of structure other than masking layer to mask (437/158) |
| FOR 319 | DF | .~.~> From melt (437/159) |
| FOR 320 | DF | .~.~> From solid dopant source in contact with substrate (437/160) {4} |
| FOR 325 | DF | .~.~> From vapor phase (437/165) {3} |