US PATENT SUBCLASS 438 / 362
.~.~ Recessed oxide by localized oxidation (i.e., LOCOS)


Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use



438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
353  DF  .~ Including isolation structure {5}
362.~.~ Recessed oxide by localized oxidation (i.e., LOCOS) {1}
363  DF  .~.~.~> With epitaxial semiconductor layer formation


DEFINITION

Classification: 438/362

Recessed oxide by localized oxidation (i.e., LOCOS):

(under subclass 353) Process for making a bipolar transistor including the step of oxidizing a portion of a semiconductive material to form an embedded oxide (i.e., field oxide) therein which forms the periphery of a semiconductive region utilized for the formation of the bipolar transistor.