US PATENT SUBCLASS 438 / 363
.~.~.~ With epitaxial semiconductor layer formation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
353  DF  .~ Including isolation structure {5}
362  DF  .~.~ Recessed oxide by localized oxidation (i.e., LOCOS) {1}
363.~.~.~ With epitaxial semiconductor layer formation

DEFINITION

Classification: 438/363

With epitaxial semiconductor layer formation:

(under subclass 362) Process for making a bipolar transistor utilizing in addition to the recessed oxide the formation of an epitaxial semiconductor layer.