US PATENT SUBCLASS 438 / 559
.~.~.~ Using capping layer over dopant source to prevent out-diffusion of dopant

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
542  DF  .~ Diffusing a dopant {15}
558  DF  .~.~ From solid dopant source in contact with semiconductor region {6}
559.~.~.~ Using capping layer over dopant source to prevent out-diffusion of dopant

DEFINITION

Classification: 438/559

Using capping layer over dopant source to prevent out-diffusion of dopant:

(under subclass 558) Processes including use of an overlying layer of material to prevent the diffusion of the electrically active impurity in the dopant source from moving therethrough.